Figure 1: Illustrative schematic and electrical properties of MFSOTE devices. | Nature Communications

Figure 1: Illustrative schematic and electrical properties of MFSOTE devices.

From: Flexible and self-powered temperature–pressure dual-parameter sensors using microstructure-frame-supported organic thermoelectric materials

Figure 1

(ah) Schematic illustration of temperature–pressure (TP) sensing mechanism: (a,b) pristine. (c,d) a temperature gradient (ΔT) is applied across a MFSOTE device. (e,f) a pressure is loaded. (g,h) loading of a coupled temperature and pressure stimuli. Graph (i,j) show the measured IV curves of a MFSOTE device taken at various ΔT (i) and different loading pressure (j). The time delay (i,j) between the contact and the measurement of the electrical signal is 10 s.

Back to article page