Figure 1: Hall responses Ryx in Crx(Bi1-ySby)2-xTe3/(Bi1-ySby)2Te3 semi-magnetic TI bilayers.
From: Quantum Hall states stabilized in semi-magnetic bilayers of topological insulators
(a) A schematic of semi-magnetic TI bilayer composed of 5-nm CBST/5-nm BST. CBST and BST represent the Crx(Bi1−ySby)2−xTe3 and (Bi1−ySby)2Te3, respectively. x-value is ∼0.2. Arrows indicate the interfaces where the Dirac state exists. (b) Transverse resistivity Ryx as a function of magnetic field B at T=2 K for several bare bilayers of 5-nm CBST/5-nm BST with different y. Cross-sectional schematic (c) and top-view photograph (d) of a FET with a Hall-bar channel of 2-nm CBST/5-nm BST (x∼0.2, y=0.88). Scale bar, 400 μm. (e) VG dependence of Ryx and longitudinal resistivity (Rxx) at B=0 T. (f) Magnetic field dependence of Ryx at T=0.5 K for several gate voltage VG for FET device of 2-nm CBST/5-nm BST with y=0.88.
