Figure 6: Fabrication and electrical properties of large-area flexible monolayer WS2-based FET arrays.
From: Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils
(a) Photograph of large-area flexible monolayer WS2 FET arrays fabricated on a PEN substrate. (b) Schematic cross-section of a WS2 buried-gate FET. (c) Optical images showing the fabrication of monolayer WS2 FET arrays. Left panel, pre-patterned electrodes on a PEN substrate. Middle panel, an ∼2-inch monolayer WS2 film transferred from a Au foil on the substrate in the left panel using the roll-to-roll/bubbling method. Right panel, the patterned monolayer WS2 film (indicated by dotted white lines) to form FET channels. (d) Typical logarithmic transfer characteristics of a buried-gate FET showing μ=0.99 cm2V−1s−1 with an ON/OFF ratio of ∼6 × 105. There is no electrical performance degradation after repeated bending to a radius of 15 mm for 100 times. (e) Output characteristics of the same device measured at room temperature.
