Figure 1: Comparison of the fabrication methods of GO and a-COx.
From: Oxygenated amorphous carbon for resistive memory applications
GO is normally produced by wet oxidation of graphite flakes, which results in widely varying and not easily tunable properties. Moreover, it is a top-down and ex situ approach, as the deposition of flakes of GO onto a substrate for device fabrication, is possible only at a later stage in the process. In contrast, a-COx is produced by PVD of a graphite target in oxygen forming gas. PVD is an easy, large-scale and in situ fabrication method, and amenable to tuning of the chemical and electrical properties of a-COx layers.
