Figure 5: The influence of the oxygen content.
From: Oxygenated amorphous carbon for resistive memory applications
(a) Absolute values of Vform plotted as a function of 
and for a-COx layer thicknesses of 10, 14 and 18 nm. Each data point represents the average of DC measurements carried out on five different memory cells with cell diameter of 2. The error bar indicates the standard deviation. Vform increases with increasing 
, reaching the saturation point at 
≈2 μbar. (b) RESET and SET states for increasing 
. The plot shows the resistance values read at 0.2 V for 100 consecutive cycles per 
(cell diameter of 2 μm). Although the SET state does not exhibit any significant change, the RESET state follows a trend similar to that of Vform.
