Figure 3: Retention behaviour of SrTiO3 thin-film devices and SrTiO3/SrO heterostructures.
From: Spectromicroscopic insights for rational design of redox-based memristive devices
(a) Average resistance of SrTiO3 thin-film devices in the LRS (dashed line) and the HRS (solid line) as a function of time after switching for a SET current compliance of 10 mA (blue lines) and 30 mA (red lines). The device schematic is shown in the inset. (b) Average resistance of SrTiO3/SrO heterostructure devices in the LRS (dashed line) and the HRS (solid line) as a function of time after switching for a SET current compliance of 10 mA (blue lines) and 30 mA (red lines). Error bars indicate the minimum and maximum values obtained for each resistance state. The device schematic is shown in the inset.
