Figure 3: Stokes PL and extracted carrier temperatures for a heterostructure (sample C) containing 1,060 nm absorption threshold MQWs. | Nature Communications

Figure 3: Stokes PL and extracted carrier temperatures for a heterostructure (sample C) containing 1,060 nm absorption threshold MQWs.

From: A hot-electron thermophotonic solar cell demonstrated by thermal up-conversion of sub-bandgap photons

Figure 3

(a) Stokes PL generated by an 808-nm pump laser with irradiance 0.33, 0.95, 3.00 and 5.00 kW cm−2. The red lines show the high-energy tail-fitting locations. The labelled emission peaks correspond to the GaAs capping layer, the MQW excited state (X1) and ground state (GS). (b) Electron–hole temperature (Teh) versus laser irradiance (Pin). Carrier temperature has been extracted from high-energy tail fitting. The arrows indicate the data points corresponding to the spectra shown in a. The inset shows the graphical process for extracting the cooling coefficient of the hot-carrier ensemble by rearranging equation (2). The gradient corresponds to the cooling coefficient of Q=30 W cm−2 K−1.

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