Figure 4: Anti-Stokes PL and extracted carrier temperatures for a full solar cell structure with an MQW solar collector (sample A) with absorption threshold 1,060 nm. | Nature Communications

Figure 4: Anti-Stokes PL and extracted carrier temperatures for a full solar cell structure with an MQW solar collector (sample A) with absorption threshold 1,060 nm.

From: A hot-electron thermophotonic solar cell demonstrated by thermal up-conversion of sub-bandgap photons

Figure 4

(a) Anti-Stokes PL of sample A under 1,064-nm laser illumination. The laser is strongly absorbed in the isolated MQWs, which have absorptivity a=0.1. At this wavelength the absorptivity of the solar cell is very small (a=1 × 10−5). The broadening indicates the generation of hot carriers. The inset shows the sample and experimental conditions used in taking the measurements. The solar cell is biased at short circuit. (b) Electron–hole temperature (Teh) versus laser irradiance (Pin) showing the threshold for carrier heating at between 50 and 125 kW cm−2.

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