Thin films of amorphous erbium oxide are effective electrical insulators and could replace silicon dioxide in future microelectronic devices
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References
Fang, Z. B. et al. Structural and electrical characterization of ultrathin Er2O3 films grown on Si(001) by reactive evaporation. Nanotechnology 18, 10.1088/0957-4484/18/15/155205 155205 (2007).
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Cheung, F. Going thin on top. Nature Nanotech (2007). https://doi.org/10.1038/nnano.2007.113
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DOI: https://doi.org/10.1038/nnano.2007.113