Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • Research Highlights
  • Published:

Dielectrics

Going thin on top

Thin films of amorphous erbium oxide are effective electrical insulators and could replace silicon dioxide in future microelectronic devices

This is a preview of subscription content, access via your institution

Access options

Buy this article

Prices may be subject to local taxes which are calculated during checkout

References

  1. Fang, Z. B. et al. Structural and electrical characterization of ultrathin Er2O3 films grown on Si(001) by reactive evaporation. Nanotechnology 18, 10.1088/0957-4484/18/15/155205 155205 (2007).

    Article  CAS  Google Scholar 

Download references

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Cheung, F. Going thin on top. Nature Nanotech (2007). https://doi.org/10.1038/nnano.2007.113

Download citation

  • Published:

  • DOI: https://doi.org/10.1038/nnano.2007.113

Search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing