Figure 1
From: Anomalous orbital structure in a spinel–perovskite interface
Linearly polarized XAS of AlO/STO at Ti L2,3-edge. (a) Schematic of experimental setup. In-plane (IV, EV||ab and E is the linear polarization vector of the photon) and out-of-plane (IH, θ is the angle between EH and c) linearly polarized X-ray were used to measure XAS of AlO/STO (thickness of AlO film is ~5.5 unit cells or 4.35 nm) at Ti L2,3-edge with total electron yield (TEY, interface sensitive) detection mode at room temperature. The contribution of linearly polarized XAS signal at Ti L2,3-edge for t2g (or eg) band mainly arises from the unoccupied Ti dxy(or ) states by in-plane IV and dxz/dyz (or ) states by out-of-plane IH. Here the signal of XLD is defined as XLD=(IH−IV). (b) XAS at Ti L2,3-edge with normal incident angle θ=90°. Both EV||ab and EH||ab. (c) XAS at Ti L2,3-edge with grazing incident angle θ=20°. As seen in a, EV||ab, whereas EH||c. All collected spectra are repeated more than six times.
