Fig. 3: Raman and PL properties near the defect in S1 shown in Fig. 1a, examined along a line passing along the center of the defect (at 5.6 × 104 W/cm2). | Light: Science & Applications

Fig. 3: Raman and PL properties near the defect in S1 shown in Fig. 1a, examined along a line passing along the center of the defect (at 5.6 × 104 W/cm2).

From: Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

Fig. 3

a Raman spectra at different displacements from the defect (in μm, increasing value from left to right). b Spatial profiles of the L+ mode frequency and width (both normalized to the defect site), and carrier density (right axis). c Spatial profiles of the Raman intensity at ν0 and PL intensity at the bandgap energy. d L+ mode peak frequency, width, and intensity at ν0 (normalized to the defect site) vs. carrier density. e Normalized radiative recombination rate. f Normalized non-radiative recombination loss rate

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