Fig. 4: Raman mapping and s-SNOM imaging of the light-induced structural phase transition in MLG.
From: Light-induced irreversible structural phase transition in trilayer graphene
a Optical microscopy image of MLG sample #125. b AFM image and height profile of graphene. c Raman maps of the integrated G peak intensity (position: 1576 cm−1, width: 5 cm−1) before laser irradiation and (d) after laser irradiation. The laser power is 20 mW, and the exposure time is 34 min. e s-SNOM image of graphene after laser irradiation. f Magnified s-SNOM image of graphene. Graphene domains with different stacking orders show different contrasts in the s-SNOM image. The marked regions I, II, and III correspond to ABC stacking, ABA stacking and mixed ABC + ABA stacking domains, respectively. The red arrows in (e, f) highlight the additional mixed ABC + ABA stacking domains that were not resolved in the Raman maps. g Raman spectra of different graphene regions taken from the marked solid dots before laser irradiation and (h) after laser irradiation
