Fig. 2: Energy band diagram and band structure of the HPT LWIR phototransistor device.
From: Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice
a Schematic diagram of the conduction (EC) and valence (EV) bands of blue numbers 1–7 indicating the sectors of the device. b Band structure of the LWIR collector (sector 5) around the Γ-point calculated from the ETBM simulation with a bandgap of ~134meV
