Fig. 4: Electrical performance of the LWIR T2SL phototransistor.
From: Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice
a Dark current density curves of the photodetector; b differential resistance-area product (R*A) at 77K vs. the applied bias voltage (Vb); and c variation in the photocurrent generation at different temperatures (77–150 K)
