Fig. 4

Sidewall passivation effect in μ-LEDs. a Schematic of the μ-LED structure with ALD deposited SiO₂ for sidewall passivation. b Electroluminescence images of the μ-LEDs (sizes from 10 μm to 100 μm) before and after sidewall passivation. c The EQE distribution of different device sizes with and without KOH treatment and ALD sidewall passivation. Reproduced from a, b ref. ⁴⁹ with permission from OSA and c ref. ⁴⁷ with permission from Copyright (2019) The Japan Society of Applied Physics