Table 1 Summary of optical memory technologies
Switching time (ps) | Freq. (GHz) | Energy efficiency (pJ/bit) | Footprint (μm2)/cell | Capacity (bits) | Technology/refs. | ||||
|---|---|---|---|---|---|---|---|---|---|
Switchinga | Staticb | Total | |||||||
On | Off | Electr. | Opt | ||||||
20 | 20 | 50c | 0.0055 | 2.16d | – | 2.16 | 72030 | 1 | Micro-ring lasers30 |
<50 | <50 | 5e | ~0.6 | 120 | – | 120.6 | 540 × 10668 | 1 | |
50f | 50f | 40e | 0.00475 | 0.1f | – | ~0.105 | 36 | 4 | |
60 | ~100 | 10g | 0.0018 | 0.6f | – | 0.6 | 56.2535 | 1 | Microdisk laser35 |
58 | 65 | ~15c | 0.00031 | – | 0.0017 | ~0.002h | <10 | 1 | BH-InP PhC nanolaser37 |
44 | 7 × 103 | 0.142i | 0.0025 | – | 0.00021 | ~0.0027 | <10 | 104/128 | |
200 | 200 | 5c | ~0.6 | ~450 | – | ~450.6 | 40 × 106 | 1 | Monolithic SOA-MZI with feedback loop36 |
10 | 60 | 10e | ~18 | 36 | – | ~54 | 0.03 × 106 | 1 | Semiconductor ring laser33 |
70 | 70 | 10e | 3 | ~120 | ~123 | 12 × 106 | 1 | Monolithic coupled SOA-MZIs25 | |
25 | 75 | 10 | 0.5 | ~180 | ~180.3 | 12 × 106 | 1 | Monolithic coupled SOA-MZIs with differentially biased push-pull technique70 | |
50 | 50 | 10e | 0.0032 | – | 0.01 | 0.013h | 6.2 | 1 | III–V on SOI PhC nanocavity laser43 |
10 × 103 | 10 × 103 | 1g | 5.3 | – | – | 5.3 | 0.16–0.25 | 3 | PCM52 |