Fig. 8: Device engineering and characterization of quasi-2D PeLEDs.
From: High-performance quasi-2D perovskite light-emitting diodes: from materials to devices
a Energy levels for different transport layers and emitting layers. b J–V curves for hole-only devices based on quasi-2D perovskite films with different spacer cation salts. Inset: Unit cell of Na2Csn−1PbnBr3n+1 perovskites with n = 1 and n = 2. c J–V curves for (BA)2(MA)2Pb4I13 PeLEDs cast at different temperatures. Inset: Scheme illustrating the charge injection and recombination processes in oriented film. d Schematic diagram for photon recycling in PeLEDs and OLEDs. e Formation of submicrometric structures in PeLEDs to enhance the light out-coupling efficiency. f Power dissipation channels of PeLEDs determined by the PEDOT:PSS layer thickness. g Light extraction efficiency changes with equivalent recombination center location for various PEDOT:PSS layer thicknesses. h Device structure of top-emission PeLEDs. Panel b is reprinted from ref. 43 with permission from the American Chemical Society. Panel c is reprinted from ref. 139 with permission from Wiley. Panel d is reprinted from ref. 155 with permission from Wiley. Panel e is reprinted from ref. 17 with permission from Springer Nature. Panels f and g are reprinted from ref. 159 with permission from Wiley. Panel h is reprinted from ref. 29 with permission from Springer Nature
