Fig. 1: VB modulation mode to lower the acceptor Ea in UWBG nitrides.
From: Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
Acceptors are randomly doped in a AlN and c GaN. Both have high Ea in this condition. b GaN QDs are embedded in the AlN matrix and acceptors are doped in the AlN matrix and concentrate near the interface
