Fig. 3: Design and characterizations of the quantum engineering Mg-doped UWBG AlGaN material.
From: Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
a Schematic diagram of the designed AlGaN:GaN QDs system. b Cross-sectional HAADF-STEM image of full structures of the as-grown sample. c XRD RSM of (−105) plane of the as-grown sample. d, e Cross-sectional HAADF-STEM images (<11–20>) of the quantum engineering Mg-doped AlGaN at different magnification. f SIMS of the Al, Ga, and Mg elements in the AlGaN:GaN QDs system
