Fig. 4: Hole conduction properties and Ea of the quantum engineering doped AlGaN.
From: Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
a, b Temperature-dependent resistivity and hole concentration from 100 to 320 K, respectively. The insets are the plots of reciprocal temperature (1000/T) verse log-scale resistivity and hole concentration. c Al-content-dependent Ea of Mg-doped disordered AlGaN alloys16,28,29,30,32,34,35,36,37,38,39,40 and the Ea of quantum engineering doped AlGaN in this work
