Fig. 5: Application of the quantum engineering doping method in AlGaN-based DUV-LED.
From: Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
a IV curves of the devices A and B. The insets are the device structure and STEM image of the active region of the devices. b EL spectra of the devices A and B at different voltages. The inset denotes the energy band diagram when the devices are working
