Fig. 2: Cross-sectional TEM images for the AlGaN layers grown on AlN/sapphire templates.
From: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Samples without (a, c) and with (b, d) a 25 nm HT-GaN interlayer. a, b are measured with diffraction vector g = (0002) to image screw-component threading dislocations. c, d with g = (0–110) to image edge-component threading dislocations. The inset of Fig. 2d is an enlarged image of the dislocation, corresponding to the dashed circle. Reprinted with permission from Jiang et al.104. Copyright 2005 American Institute of Physics
