Fig. 20: Reduced area epitaxy for the growth of AlGaN photodetector pixels. | Light: Science & Applications

Fig. 20: Reduced area epitaxy for the growth of AlGaN photodetector pixels.

From: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Fig. 20

a SEM image of patterned AlN, mesa size: 26 μm × 26 μm, periodicity: 30 μm. b Cross-sectional SEM image of sidewall. Implemented AlGaN UV photodetector grown on patterned (c) and unpatterned (d) AlN template. Reprinted with permission from Cicek et al.271. Copyright 2013 American Institute of Physics

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