Fig. 5: Epitaxial lateral overgrowth for AlGaN fabrication.
From: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
a Cross-sectional secondary electron image of AlGaN grown on an AlN ELO template. Reprinted with permission from Kueller et al.117. Copyright 2010 Elsevier B.V. b, c SEM images of the stripe-patterned AlN/Si(111) template. d AFM image of the ELO-AlN layer grown on the patterned Si template and corresponding cross-sectional SEM image of the patterned structure (e). Atomic steps are observed over the trenches. Reprinted with permission from Cicek et al.118. Copyright 2013 American Institute of Physics. f Plan-view SEM image of n-Al0.8Ga0.2N grown on ELO-AlN. g Cross-sectional annular dark-field STEM image presents that the defect distribution in the ELO-AlN-AlGaN structure. Reprinted with permission from Mogilatenko et al.116. Copyright 2014 Elsevier B.V
