Fig. 8: Energy band diagrams of GaN/Al0.15Ga0.85N MQW.
From: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
a LED of N-polar QW with traditional electron blocking layer and b with graded p-AlGaN (polarization-induced p-doping). c LED of Ga-face QW: polarization fields oppose electron injection. d LED of N-face QW: polarization fields assist carrier injection. Reprinted with permission from Verma et al.151. Copyright 2011 American Institute of Physics
