Fig. 3 | Light: Science & Applications

Fig. 3

From: Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Fig. 3

HAADF-STEM analysis of GaN on untreated graphene/SiC. a Cross-sectional HAADF-STEM image of GaN on untreated graphene. b Cross-sectional HAADF-STEM image of the interface area marked with a red rectangle frame in (a). c Cross-sectional HRTEM image of the interface area marked with a blue rectangle frame in (b). The multilayer graphene at the interface is clearly visible. The inset in (c) shows the SAED pattern of AlN in the white square region. d EDS mappings of elemental C, Si, Al, and N at the interface of AlN/graphene/SiC

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