Fig. 4 | Light: Science & Applications

Fig. 4

From: Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Fig. 4

Raman and XPS analyses of graphene before and after nitrogen-plasma pre-treatment. a Raman spectra of untreated graphene (blue) and nitrogen-plasma-treated graphene (red). The green and black diamond blocks correspond to the characteristic peaks of SiC and graphene, respectively. The orange dashed region shows a significant increase in the intensity of D peak. XPS spectra with C 1s of: b untreated graphene, and c nitrogen-plasma-treated graphene. XPS results show that nitrogen-plasma pre-treatment introduces C–N bonds on graphene surface: N–sp2C bonds (~285.5 eV) and N–sp3C bonds (~286.5 eV)

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