Fig. 8
Characterizations of InGaN/GaN MQWs on SiC and graphene/SiC substrates, respectively. XRD 2θ-ω scans spectra of (0002) plane for InGaN/GaN MQWs grown on: a SiC, and b graphene/SiC substrates, respectively. c PL spectra of InGaN/GaN MQWs grown on SiC and graphene/SiC substrates (T = 10 K)
