Fig. 11: The polarization field effect on the energy band structures of Mg-doped AlGaN SLs. | Light: Science & Applications

Fig. 11: The polarization field effect on the energy band structures of Mg-doped AlGaN SLs.

From: Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Fig. 11

Calculated valence band diagram for Mg-doped Al0.2Ga0.8N/GaN SL in which the thickness of each layer is L = 30 Å, shown without (a) and with the polarization fields taken into account (b). The macroscopic averaged electrostatic potential (c) and macroscopic averaged differential charge density (d) of Mg- and Si-δ-codoped (solid lines) and undoped (dash lines) Al0.5Ga0.5N/GaN SLs plotted in the [0001] direction normal to the interface. Figures reproduced from a and b ref. 153, © 1999 AIP Publishing; c and d ref. 155, © 2009 AIP Publishing

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