Fig. 12: The charge distribution (orbitals) at the top of valance bands in SLs structures.
From: Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
a The isosurface of the valence states at the top of valance bands for Mg-doped 3D and conventional GaN/AlN SLs with k vector restricted to [0001]. b Decomposed DOS of px, py, and pz of Mg and bonded N atoms in 3D SL and conventional SL. The N bonded with Mg lying in the ab plane and out of the plane is respectively denoted as Nin and Nout in the inset. Figures reproduced from ref. 156, © 2016 Springer Nature
