Fig. 4: Schematic sequence and the cross-sectional morphologies for the grown short-period (AlN)m/(GaN)n SLs. | Light: Science & Applications

Fig. 4: Schematic sequence and the cross-sectional morphologies for the grown short-period (AlN)m/(GaN)n SLs.

From: Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Fig. 4

a MOCVD schematic sequence and b high-resolution cross-sectional TEM images for the hierarchical growth units of (AlN)m/(GaN)n short-period SLs with different well and barrier thicknesses. c MBE growth diagram showing shutter sequence for a single period of the growth and d the Z-contrast STEM images for the 10 periods of GaN/AlN heterostructures. Figures reproduced from a and b ref. 71, © 2019 American Chemical Society; c and d ref. 73, © 2017 AIP Publishing

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