Fig. 7: The strain field effect on the energy band structure, transition and emission in AlGaN quantum structures. | Light: Science & Applications

Fig. 7: The strain field effect on the energy band structure, transition and emission in AlGaN quantum structures.

From: Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Fig. 7

a The strain in active region required to achieve TE polarization at prescribed wavelengths. b Calculated energy spacing between the Г9 and Г7+ VBs for fully compressive AlGaN grown on AlN, fully relaxed AlGaN, and fully tensile AlGaN grown on GaN. c The biaxial stress of AlGaN MQWs derived from stress-free Al0.52Ga0.48N as a function of current. d The calculated total spontaneous emission rate as a function of strain. Figures reproduced from a ref. 97, © 2012 AIP Publishing; b ref. 98, © 2015 AIP Publishing; c and d ref. 103, © 2017 The Royal Society of Chemistry

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