Fig. 4
From: Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
InN QDs in 3D AFM (300 nm)2 scans. Continuously grown GaN cap thicknesses of (a) 0, (b) 12, (c) 18, and (d) 23 nm. From Reilly et al., Phys. Status Solidi Basic Res. 257, 1900508 (2020) © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim54
