Fig. 3: TEM characterization of InP sub-micron wires and membranes.
From: A monolithic InP/SOI platform for integrated photonics

a Schematic to illustrate the TEM lamella along epitaxial direction. b Global-view TEM image of InP membrane by 10 µm pattern length. Scale bar, 1 µm. c TEM image close to Si area. Scale bar, 200 nm. d Close-up TEM image at InP/Si interface. Scale bar: 5 nm. e, f Representative TEM image at main epitaxial area and the corresponding FFT image. Scale bar, 10 nm. g Schematic to illustrate the TEM lamella perpendicular to epitaxial direction. TEM image of InP membrane (h, i) with 10 µm and 2 µm pattern length, and InP sub-micron wire (j) with 500 nm pattern length, respectively. Scale bar of h–j, 1 µm, 200 nm, and 100 nm, respectively. k Zoomed-in TEM image of i at bottom-right oxide corner. Scale bar, 20 nm. l Zoomed-in TEM image of h at upper-right corner. Scale bar, 100 nm