Fig. 3: Passivation mechanism and spectroscopic characterization of perovskite films/devices with ligand-tailored SnO2 QDs. | Light: Science & Applications

Fig. 3: Passivation mechanism and spectroscopic characterization of perovskite films/devices with ligand-tailored SnO2 QDs.

From: Room-temperature multiple ligands-tailored SnO2 quantum dots endow in situ dual-interface binding for upscaling efficient perovskite photovoltaics with high VOC

Fig. 3

a Schematic illustration of proposed in situ interfacial defect passivation induced by utilizing ligand-tailored SnO2 QDs. b XPS core-level spectra of Sn 3d on c-SnO2, SnO2 NPs, and SnO2 QDs film. c The deionized water contact angles of various ETLs coated FTO substrates. d GIWAXS patterns of the perovskite films deposited on various ETLs coated quartz substrates. e The diffraction features of the corresponding intensity as a function of q. f EL emission spectra from SnO2 QD-based PSCs under different voltage bias. The inset displays a bright red emission (~770 nm) operating as a light-emitting diode (LED). g The plot of ELQE as a function of the injection current density

Back to article page