Fig. 2: The nanogap slit fabrication technology and s-SNOM.
From: Hybrid Dirac semimetal-based photodetector with efficient low-energy photon harvesting
a The nanogap slit device fabrication process, including PtSe2 fabrication, ultraviolet lithography, lift-off processes, and tilt deposition. b Schematic of the bow-tie antenna-assisted device. c–e Optical microscopy and false-color SEM images of the PtSe2 nanogap slit device with a typical channel length (100 nm and 30 nm). f The near-field images are taken around the slit area using broadband illumination. g Stereograph of the near-field signal
