Fig. 3: Characteristics of the PtSe2 low-energy photon detector.
From: Hybrid Dirac semimetal-based photodetector with efficient low-energy photon harvesting
a Schematic diagram of the experimental geometry, with photon-beam spot profile (diameter: 800 μm), derived from two-dimensional scanning of the photodetector. b The band diagram at the different metal junction regions with/without bias. c Bias dependence of responsivity at 0.12 THz and 0.3 THz for different channel lengths. d The measured photocurrent vs. output power Pin, with the power, varied from 0.3 μW to 300 μW. The channel length of the typical microgap slit and nanoslit device is 4 μm and 100 nm, respectively. e, f The conversion efficiency of the nanogap slit photodetector versus the incident power at room temperature. g Pt-4f and Se-3d core levels, measured at a photon energy of 400 eV. h Time-resolved photo signal of PtSe2-based nanogap slit photodetector at Vbias = 0 V
