Fig. 3: XRC, TEM and Raman analyses for crystal quality of as-grown AlN film. | Light: Science & Applications

Fig. 3: XRC, TEM and Raman analyses for crystal quality of as-grown AlN film.

From: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

Fig. 3

a FWHMs of (0002)- and (10\(\bar 1\)2)-plane XRCs of AlN epilayer with various thicknesses grown on Gr-buffered sapphire. b Estimated DD of the AlN films with and without Gr buffer layer with various thicknesses. c DF images of epitaxial AlN/Gr/sapphire with g = [0002]. d HRTEM image of the AlN/Gr/sapphire interface. e Raman spectra of as-grown AlN/Gr/sapphire structure. f Relative Raman shifts of E2 (high) of AlN with various growth thicknesses

Back to article page