Fig. 8: Photoluminescence decays of GaN QDs recorded at 5 K.
From: Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
The transients are given for QDs emitting at a 3.80 eV and b 4.25 eV, for increasing excitation power densities. The tail of each transient is approximated by a single exponential with a τdecay value of 6.5 and 2.8 ns, respectively (yellow dash-dotted lines). At low excitation power density, the decay is bi-exponential. The fast decay component is also highlighted in the graph (orange dashed line). Noticeably, the discrepancy between the bi-exponential fit and the experimental data increases with excitation power density. The channel resolution was reduced down to 80 ps/channel to improve the qualitative appraisal of decay time conservation. As an illustration, the filled areas correspond to the integrated intensity Itot collected at 11 mW cm−2
