Fig. 9: Photoluminescence decays of GaN QDs emitting at 3.80 eV recorded from 5 to 260 K at an excitation power density of 1 W cm−2.
From: Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
All curves are stacked in order to superimpose the tail of the TRPL transients. The channel resolution was reduced down to 80 ps/channel to improve the qualitative appraisal of decay time conservation
