Fig. 3: Layer PN junction and diode device based on it. | Light: Science & Applications

Fig. 3: Layer PN junction and diode device based on it.

From: Pristine PN junction toward atomic layer devices

Fig. 3

a Schematic and optical-microscope images of a layer PN junction on MoS2 flake. In such device, it simply requires a MoS2 flake to consists of two-stepwise layer thickness, 4L and 28L. Symmetrical electrodes (Cr/Au) were deposited on both sides afterwards. b Dark and photo-excited IV curves of the MoS2 layer junction. The measurements were performed at room temperature and under an illumination of 1 µW/µm2 @ 520 nm. Inset: IV curves in semilog-coordinate. c Scanning-photocurrent-microscopy (SPCM) image of such device. The laser-beam is 520 nm in wavelength and ~1 µm in diameter. The white dashed lines mark the boundary of metal-electrodes, 4L and 28L MoS2. d Low temperature (~100 K) dark and photo-excited IV curves (under an illumination of 0.42 mW/mm2 @ 520 nm)

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