Fig. 2: Scanning transmission electron microscopy high-angle annular dark-field image of a GaSb layer grown on an on-axis (001) Si substrate.
From: Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
The dashed yellow line indicates an APB separating two polar domains. The insets show the Ga-Sb dumbbells in each domain, where the brighter atom is Sb due to its higher atomic number. Adapted with permission from ref. 93. © John Wiley & Sons
