Fig. 8: L–I–V curves in CW at various temperatures for a GaSb DL grown on a MOVPE GaAs-on-Si template.
From: Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
The inset shows the evolution of the current threshold and the external quantum efficiency as a function of the temperature. Adapted with permission from ref. 107. © Optical Society of America
