Fig. 9: L–I–V curves in CW at RT for various GaSb DLs grown on a MOVPE GaSb-on-GaAs-on Si template.
From: Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
The inset shows the evolution of the inverse of the external quantum efficiency as function of the cavity length. Adapted with permission from ref. 107. © Optical Society of America
