Table 1 Literature data for mid-IR lasers (λ ≥ 2 µm) integrated on silicon substrates, organized chronologically by laser technologies
From: Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
Year | λ (µm) | Laser | Integration approach | Substrate | Threshold (A cm−2), operating mode, T (K) | Tmax (°C) | Ref./section |
|---|---|---|---|---|---|---|---|
2009 | 2.25 | GaSb DL | MBE | 4° offcut Si | 5000, pulsed, RT | n.a. | 101/“All-MBE grown GaSb-on-Si laser diodes” |
2011 | 2 | GaSb DL | MBE | 7° offcut Si | 900, CW, RT | 35 | 35/“All-MBE grown GaSb-on-Si laser diodes” |
2013 | 2 | GaSb DL | BCB bonding | SOI | 385, CW, RT | 35 | 12/“Introduction” |
2015 | 2 | InP DL | Direct bonding | SOI | 1500, CW, RT | 35 | 13/“Introduction” |
2016 | 2.3 | InP DL | BCB bonding | SOI | 2700, CW, 280 | 9 | 14/“Introduction” |
2017 | 2.35 | InP DL | BCB bonding | SOI | 2900, CW, RT | 20 | 15/“Introduction” |
2020 | 2.3 | GaSb DL | MBE | Si | 400, CW, RT | >80 | 37/“All-MBE grown GaSb-on-Si laser diodes” |
2021 | 2.3 | GaSb DL | MBE DL on MOVPE buffer layer | Si | 250, CW, RT | >80 | 109/“MBE-grown GaSb laser diodes on MOVPE-on-Si templates” |
2018 | 3.6 | GaSb ICL | Direct bonding | SOI | 1100, pulsed, RT | 50 | 16/“Introduction” |
2021 | 3.5 | GaSb ICL | MBE | Si | 300, CW, RT | 50 | 38/“ICLs grown on Si” |
2016 | 4.8 | InP QCL | Direct bonding | SONOI | 1600, pulsed, RT | 60 | 17/“Introduction” |
2017 | 4.7 | InP QCL | SU-8 bonding | SOS | 5600, pulsed, RT | n.a. | 18/“Introduction” |
2018 | 4.4 | InP QCL | MOVPE | 6° offcut Si | 1800, pulsed, 78 K | −30 | 31/“Introduction” |
2018 | 11 | InAs/AlSb QCL | MBE | 6° offcut Si | 1400, pulsed, RT | 120 | 33/“QCL heterostructures” |
2020 | 7.4 | InP QCL | Direct bonding | SOI | 2500, pulsed, RT | n.a. | 19/“Introduction” |
2020 | 8 | InAs/AlSb QCL | MBE | Si | 920, pulsed, RT | 120 | 34/“InAs/AlSb QCLs grown on Si” |
