Fig. 1: CW operation of EL characterization of as-constructed n-PtNPs@ZnO:Ga MW/Pt/MgO/p-GaN heterojunction device.
From: Electrically driven single microwire-based single-mode microlaser
a Schematic illustrating the cross-section of the laser device architecture based on the n-PtNPs@ZnO:Ga MW/Pt/MgO/p-GaN heterojunction. In the device configuration, ITO and Ni/Au working as electrodes are responsible for the current injection. b I–V curve of the fabricated single MW heterojunction emission device. Inset: the I–V curves of Ni/Au electrode contacted to the p-type GaN film, and a single PtNPs@ZnO:Ga MW, respectively. c Current-dependent EL spectra of the as-fabricated single MW-based LED, as the injection current is increased from 11.6 to 25.31 mA. d Variations of the integrated EL intensity and spectral FWHM as a function of injection current, showing a lasing threshold of 11.12 mA. e EL spectrum via Lorentz fitting at the input current of 21.05 mA, providing the FWHM of the lasing peak δλ ~ 0.18 nm, and the corresponding Q-factor value is calculated to about 2169
