Fig. 3: Fabrication and characterization of electrically driven microlaser, showing multimode lasing actions.
From: Electrically driven single microwire-based single-mode microlaser
a I–V curve of the fabricated n-ZnO:Ga MW/Pt/MgO/p-GaN heterojunction device. Inset: A schematic illustration of the fabricated ultraviolet microlaser, which is consisting of a bare ZnO:Ga MW, Pt/MgO buffer layers and p-type GaN film. b SEM observation of an individual ZnO:Ga MW, showing hexagon-shaped cross-sectional profile and smooth side surfaces. c Injection current-dependent EL emission spectra of the as-fabricated single MW heterojunction emission device, with the input current varying in the range of 11.17–37.50 mA. d Integrated EL intensity as a function of injection current, yielding a lasing threshold of 16.4 mA. e EL spectrum via Lorentz fitting at an operating current of 26.62 mA, providing the average linewidth of the lasing peak δλ ~ 1.36 nm, and the corresponding Q-factor is calculated to about 292
