Fig. 1: HgTe CQD.
From: High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction
a Phase transfer and Doping control. b TEM of OAM capped HgTe CQD. c TEM of HgTe CQD after phase transfer. d Absorption spectra of CQD with different doping. e Schematic diagram of FET device. f, g FET transfer curves of p-type, n-type and intrinsic on CQD solids at room temperature. h Mobility as a function of temperature
