Table 1 Comparison of typical mid-IR QD photodetectors
From: High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction
Device | Wavelength nm | Bias V | T K | D* Jones | ℜ A/W | ref |
|---|---|---|---|---|---|---|
(epitaxial) PV/GaAs substrate/n+ GaAs /GaAs/ n+ InAs QD/ GaAs barrier/ AlGaAs barrier/ GaAs contact | ~4300 | 2 | 100 | 1011 | / | |
170 | 1010 | 0.12 | ||||
(epitaxial) PV/ InAs QD/ AlGaAs barrier | ~5000 | 2 | 100 | 2 × 109 | 0.2 | |
(epitaxial) InP substrate/InAs QD | ~4100 | 5 | 120 | 2.8 × 1011 | / | |
300 | 6.7 × 107 | / | ||||
(epitaxial)PV/ Si substrate/Ge QD/Si | 3000~5000 | 2 | 90 | 8 × 1010 | 0.25 | |
(colloidal) PC/HgTe QD with EDT | ~5000 | 5 | 80 | 6.1 × 108 | / | |
200 | 2.5 × 108 | / | ||||
295 | 5 × 107 | 0.1 | ||||
(colloidal) PC/ HgTe QD with As2S3 | ~3500 | 3 | 100 | 3.5 × 1010 | / | |
200 | 2.37 × 1010 | 0.052 | ||||
300 | 1.54 × 109 | 0.01 | ||||
(colloidal)PV/CaF2/NiCr/HgTe QD/Ag | ~3700 | 0 | 90 | 4.2 × 1010 | 0.08 | |
200 | 1 × 109 | 0.01 | ||||
290 | 1.2 × 107 | 0.001 | ||||
(colloidal) PV/ITO/HgTe QD /Ag2Te QD /HgCl2/Au | ~3700 | 0 | 80 | 1 × 1011 | 0.4 | |
200 | 1 × 1010 | 0.46 | ||||
295 | 3 × 108 | 0.08 | ||||
(colloidal) PV/ITO/metal disks/ HgTe QD /Ag2Te QD / Optical spacer/Au | ~4400 | 0 | 85 | 4 × 1011 | 1.6 | |
200 | 1.5 × 1010 | / | ||||
300 | 7.2 × 108 | / | ||||
(colloidal) PC /HgTe QD with hybrid ligands | ~3770 | 1.5 | 80 | 5.4 × 1010 | 0.2 | |
200 | 2 × 109 | / | ||||
300 | 6 × 107 | / | ||||
(colloidal) PV/ HgTe QD | ~4400 | 0 | 80 | 2.7 × 1011 | 2.7 | This work |
200 | 1011 | 2.0 | ||||
280 | 1010 | 0.6 | ||||
300 | 7.6 × 109 | 0.58 |
