Fig. 3: Structure characterization of multi-beam direct writing results.
From: Nanoscale multi-beam lithography of photonic crystals with ultrafast laser
a Raman intensity spectrums of laser processed area and unmodified region. b Enlargement of Raman intensity spectrums for wavenumbers from 230 cm−1 to 460 cm−1. c XPS intensity of multi-beam processed area and unmodified region
